Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
TL;DR: An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the cVD h-BN film depended significantly on the film growth mode and the resultant film quality.
Journal ArticleDOI
Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
Jens Trommer,Andre Heinzig,Uwe Mühle,Uwe Mühle,Markus Löffler,Annett Winzer,Paul M. Jordan,Jurgen Beister,Tim Baldauf,Marion Geidel,B. Adolphi,Ehrenfried Zschech,Thomas Mikolajick,Walter M. Weber +13 more
TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
Journal ArticleDOI
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal,Fang Liu,Matthias Voelskow,Lasse Vines,Lars Rebohle,Denny Lang,Yonder Berencén,Stefan Andric,Roman Boettger,Manfred Helm,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa +12 more
TL;DR: Ion implantation followed by rear side flash-lamp annealing (r-FLA) is used for the fabrication of heavily doped n-type Ge with high mobility, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.
Journal ArticleDOI
Bending induced electrical response variations in ultra-thin flexible chips and device modeling
TL;DR: In this paper, the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic).
References
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Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
T. H. Loh,H. S. Nguyen,C.H. Tung,A. D. Trigg,G. Q. Lo,N. Balasubramanian,Dim-Lee Kwong,Sukant K. Tripathy +7 more
TL;DR: In this article, a method to grow high quality strain-relaxed Ge on a combination of low-temperature Ge seed layer on low temperature ultrathin Si0.8Ge0.2 buffer with thickness of 27.3nm by ultrahigh vacuum/chemical vapordeposition method without the need to use chemical mechanical polish or high temperature annealing.
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High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
Duygu Kuzum,Tejas Krishnamohan,Aneesh Nainani,Yun Sun,Piero Pianetta,H.-S. Philip Wong,Krishna C. Saraswat +6 more
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Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si
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Proceedings ArticleDOI
Heterogeneous integration of enhancement mode in 0.7 ga 0.3 as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications
Mantu K. Hudait,G. Dewey,Suman Datta,J. M. Fastenau,Jack Portland Kavalieros,W. K. Liu,D. Lubyshev,R. Pillarisetty,W. Rachmady,Marko Radosavljevic,Titash Rakshit,R. Chau +11 more
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Low surface roughness and threading dislocation density Ge growth on Si (0 0 1)
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