Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
TL;DR: An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the cVD h-BN film depended significantly on the film growth mode and the resultant film quality.
Journal ArticleDOI
Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
Jens Trommer,Andre Heinzig,Uwe Mühle,Uwe Mühle,Markus Löffler,Annett Winzer,Paul M. Jordan,Jurgen Beister,Tim Baldauf,Marion Geidel,B. Adolphi,Ehrenfried Zschech,Thomas Mikolajick,Walter M. Weber +13 more
TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
Journal ArticleDOI
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal,Fang Liu,Matthias Voelskow,Lasse Vines,Lars Rebohle,Denny Lang,Yonder Berencén,Stefan Andric,Roman Boettger,Manfred Helm,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa +12 more
TL;DR: Ion implantation followed by rear side flash-lamp annealing (r-FLA) is used for the fabrication of heavily doped n-type Ge with high mobility, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.
Journal ArticleDOI
Bending induced electrical response variations in ultra-thin flexible chips and device modeling
TL;DR: In this paper, the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic).
References
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Journal ArticleDOI
Epitaxy solutions for Ge MOS technology
Frederik Leys,Renaud Bonzom,Roger Loo,O. Richard,B. De Jaeger,J. Van Steenbergen,Kristof Dessein,Thierry Conard,Jens Rip,Hugo Bender,W. Vandervorst,Marc Meuris,Matty Caymax +12 more
TL;DR: In this paper, the initial growth mode of Si on Ge(100) was studied using SiH 4 CVD under a reduced-pressure N 2 ambient at 500 and 575 °C.
Journal ArticleDOI
Invited) Status and Trends in Ge CMOS Technology
Cor Claeys,Jerome Mitard,Geert Hellings,Geert Eneman,Brice De Jaeger,Liebeth Witters,Roger Loo,Annelies Delabie,Sonja Sioncke,Matty Caymax,Eddy Simoen +10 more
Journal ArticleDOI
Carbon-mediated growth of thin, fully relaxed germanium films on silicon
TL;DR: In this paper, smooth, fully relaxed Ge layers (thickness below 100nm) were grown directly on Si(001) in a cyclic process flow, each cycle consists of a low temperature epitaxy step followed by the deposition of less than a monolayer of carbon and subsequent thermal annealing.
Proceedings ArticleDOI
Hole Mobility and Its Enhancement with Strain for Technologically Relevant III-V Semiconductors
TL;DR: In this article, the use of strain to reduce hole effective masses by splitting the heavy hole (hh) and light hole (lh) valence bands was first demonstrated in p-channel InGaAs/(Al)GaAs.
Journal ArticleDOI
(Invited) Heterogeneously Integrated III-V on Silicon for Future Nanoelectronics
TL;DR: In this paper, the In0.7Ga0.3As quantum-well FET structures were heterogeneously integrated on Si substrate to address the low band gap III-V device structures on Si growth issues, and as a potential NMOS channel material for low-power logic.