Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
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High-K materials and metal gates for CMOS applications
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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
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Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
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TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
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Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal,Fang Liu,Matthias Voelskow,Lasse Vines,Lars Rebohle,Denny Lang,Yonder Berencén,Stefan Andric,Roman Boettger,Manfred Helm,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa +12 more
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Bending induced electrical response variations in ultra-thin flexible chips and device modeling
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EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection
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Theoretical formalism to understand the role of strain in the tailoring of hole masses in p‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors
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