Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Journal ArticleDOI
Surface Reconstruction of Germanium: Hydrogen Intercalation and Graphene Protection
TL;DR: In this article, the surface reconstructions of Ge (110) under graphene were examined using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS).
Journal ArticleDOI
Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer
Peter D. Nguyen,Michael Clavel,Patrick S. Goley,Jheng-Sin Liu,Noah Allen,Louis J. Guido,Mantu K. Hudait +6 more
TL;DR: In this paper, structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated.
Journal ArticleDOI
Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
Wilhelmus J. H. Berghuis,Jimmy Melskens,Bart Macco,Roel J. Theeuwes,Marcel A. Verheijen,Wilhelmus M. M. Kessels +5 more
TL;DR: In this article, the influence of the Al2O3 thickness, substrate temperature, and post-deposition anneal on surface passivation was investigated and the role of the GeOx interlayer as well as the presence of interface charges was addressed.
Journal ArticleDOI
Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)
B. De Schutter,K. van Stiphout,N. M. Santos,Eva Bladt,Jean Jordan-Sweet,Sara Bals,Christian Lavoie,C.M. Comrie,André Vantomme,Christophe Detavernier +9 more
TL;DR: In this paper, the solid phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal was studied using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS).
Journal ArticleDOI
Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method
TL;DR: In this paper, the impact of the SiGe thickness in starting substrates composed of Si/Si0.25Ge0.75/SOI(100) structures for the Ge condensation process on the resulting Ge-on-insulator (GOI) film properties was investigated.
References
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