Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
Reads0
Chats0
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
More filters
Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Metal oxides for optoelectronic applications
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Journal ArticleDOI
Solution Combustion Synthesis of Nanoscale Materials
TL;DR: This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions.
Journal ArticleDOI
Recent Progress in Materials and Devices toward Printable and Flexible Sensors
TL;DR: In this review, recent progress in materials and devices for future wearable sensor technologies for bio and medical applications are reported.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
References
More filters
Journal ArticleDOI
Transparent amorphous In–Ga–Zn–O thin film as function of various gas flows for TFT applications
TL;DR: In this article, the electrical and optical properties of amorphous indium gallium zinc oxide (a-IGZO) films, which can be used as a channel layer, deposited by radio frequency (rf) magnetron sputtering system at room temperature (RT), were investigated as function of various gas flows.
Journal ArticleDOI
The Effect of Passivation Layers on the Negative Bias Instability of Ga-In-Zn-O Thin Film Transistors under Illumination
Ji Sim Jung,Kwang Hee Lee,Kyoung Seok Son,Joon Seok Park,Tae Sang Kim,Jong Hyun Seo,Jae-Hong Jeon,Mun Pyo Hong,Jang Yeon Kwon,Bonwon Koo,Sang-Yun Lee +10 more
TL;DR: In this paper, Ga-In-Zn-O (GIZO) thin film transistors with disparate passivation structures were fabricated and their stabilities were compared and the devices were subjected to a negative bias stress with simultaneous exposure to visible light.
Journal ArticleDOI
A High Performance Inkjet Printed Zinc Tin Oxide Transparent Thin-Film Transistor Manufactured at the Maximum Process Temperature of 300 ° C and Its Stability Test
Christophe Avis,Jin Jang +1 more
Journal ArticleDOI
Effect of annealing on the electrodeposited Cu2O films for photoelectrochemical hydrogen generation
TL;DR: In this article, photoelectrochemical activity for H 2 O generation was obtained on the Cu 2 O films before and after annealing by recording relevant photoelectronchemical currents at − − 0.3 V in 0.5 M aqueous Na 2 SO 4 solution.
Journal ArticleDOI
Electrical Instability of a-In–Ga–Zn–O TFTs Biased Below Accumulation Threshold
Denis Stryakhilev,Jin-Seong Park,Jae-Seob Lee,Tae-Woong Kim,Young Shin Pyo,Dong Bum Lee,Eun Hyun Kim,Dong Un Jin,Yeon-Gon Mo +8 more
TL;DR: In this article, the electrical instability of thin-film transistors based on amorphous indium-gallium-zinc oxide (a-IGZO) was investigated using constant bias and constant current stress.