Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
References
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Journal ArticleDOI
A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics
TL;DR: In this paper, high-κ HfOxNy and HfO2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering.
Journal ArticleDOI
Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films
TL;DR: In this article, the authors reported the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures.
Journal ArticleDOI
Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor
Chang Jung Kim,Jae-Chul Park,Sunil Kim,Ihun Song,Sang-Wook Kim,Youngsoo Park,Eunha Lee,Benayad Anass,Jin-Seong Park +8 more
TL;DR: In this paper, the damage of an amorphous Ga 2 O 3 -In 2O 3 -ZnO (a-GIZO) thin-film transistor (TFT) due to dry etching was removed by wet-cleaning treatment and characterized in terms of electrical performance.
Journal ArticleDOI
Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through $C$ – $V$ Characterization
Hagyoul Bae,Sungchul Kim,Minkyung Bae,Ja Sun Shin,Dongsik Kong,Hyunkwang Jung,Jaeman Jang,Jieun Lee,Dae Hwan Kim,Dong Myong Kim +9 more
TL;DR: In this article, a two-terminal parallel-mode C-V technique was proposed to separate the source and drain resistances of amorphous indium-gallium-zinc oxide (a-IGZO) transistors.
Journal ArticleDOI
Density of States-Based DC $I$ – $V$ Model of Amorphous Gallium–Indium–Zinc-Oxide Thin-Film Transistors
Jun-Hyun Park,Sangwon Lee,Kichan Jeon,Sunil Kim,Sangwook Kim,Jae-Chul Park,I-hun Song,Chang Jung Kim,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim +10 more
TL;DR: In this paper, the density of states (DOS)-based DC I-V model of an amorphous gallium-indium-zinc oxide (a-GIZO) thin-film transistor (TFT) is proposed and demonstrated with self-consistent methodologies for extracting parameters.