Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: In this article, the recent progress in n-and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p type, and the major milestones already achieved with this emerging and very promising technology are summarized.
References
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Journal ArticleDOI
Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors
TL;DR: In this paper, the preparation of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via thermal processing of solution-deposited precursor thin films in air is reported.
Journal ArticleDOI
Growth of ZnO:Ga thin films at room temperature on polymeric substrates: thickness dependence
TL;DR: In this paper, the thickness dependence of gallium-doped zinc oxide (GZO) on polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature was investigated.
Journal ArticleDOI
High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
Linfeng Lan,Junbiao Peng +1 more
TL;DR: In this article, an IGZO TFT based on anodic Al2O3 showed a mobility of 21.6 cm2/V·s, an on/off current ratio of as high as 108, and a threshold voltage of only 2 V.
Journal ArticleDOI
ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators
Seok Hwan Noh,Won-Jun Choi,Min Suk Oh,Do Kyung Hwang,Do Kyung Hwang,Kimoon Lee,Seongil Im,Sungjin Jang,Eugene Kim +8 more
TL;DR: In this article, a top-gate ZnO thin-film transistor with a polymer dielectric/ferroelectric double-layer gate insulator was constructed using a sequential spin-casting process of 450nm-thick poly-4-vinylphenol (PVP) and 200-nm-thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)].
Journal ArticleDOI
High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering
Wantae Lim,S. Kim,Yu-Lin Wang,Jain Lee,David P. Norton,Stephen J. Pearton,Fan Ren,Ivan I. Kravchenko +7 more
TL;DR: In this article, a-IGZO-based thin-film transistors based on amorphous indium gallium zinc oxide were fabricated by radiofrequency magnetron sputtering on glass substrates.