Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2.
TL;DR: A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 104.
Journal ArticleDOI
Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects
TL;DR: In this paper, the effects of oxygen vacancies on the properties of a-IGZO by relating experimental observations to microscopic insights gained from first-principle simulations were investigated.
Journal ArticleDOI
Low-temperature, inkjet printed p-type copper(I) iodide thin film transistors
Chang-Ho Choi,Jenna Y. Gorecki,Zhen Fang,Marshall Allen,Shujie Li,Liang-Yu Lin,Chun-Cheng Cheng,Chih-Hung Chang +7 more
TL;DR: In this paper, the first low temperature fabrication of printed p-type CuI TFTs was reported for the first time and the printed CuI film was fabricated by printing molecular CuI ink directly onto the device substrate followed by immediate crystallization of CuI nanoparticles as the solvent evaporated.
Journal ArticleDOI
Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
TL;DR: In this article, a bilayer IGZO channel structure consisting of a 10 nm base layer and a 3 nm boost layer was designed based on a cation combinatorial study of the ALD-derived TFTs with HfO2-based gate insulators.
Journal ArticleDOI
Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics
TL;DR: This is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved and it is believed that these ultrathin, high-k organic dielectrics with excellent mechanical flexibility will play a crucial role in future soft electronics.
References
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Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
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