Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
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TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O 3 radiation and low temperature annealing
TL;DR: In this paper, high performance thin film transistors (TFTs) based on amorphous In-Sn-Ga-O (ITGO) semiconductor were fabricated.
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Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors
Guoli Li,Ablat Abliz,Lei Xu,Nicolas André,Xingqiang Liu,Yun Zeng,Denis Flandre,Denis Flandre,Lei Liao,Lei Liao +9 more
TL;DR: In this paper, the physics of active trap states impacted by hydrogen (H) and nitrogen (N) dopings in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors were analyzed.
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Inverted and Large Flexible Organic Light-Emitting Diodes with Low Operating Voltage
TL;DR: In this article, a 120 × 120 mm2 flexible inverted organic light-emitting diodes (IOLEDs) with 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN)/aluminium/n-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) used as an electron injection layer (EIL) were demonstrated.
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A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors.
Adrica Kyndiah,Abduleziz Ablat,Abduleziz Ablat,Seymour Guyot-Reeb,Thorsten Schultz,Fengshuo Zu,Fengshuo Zu,Norbert Koch,Norbert Koch,Patrick Amsalem,Stefano Chiodini,Stefano Chiodini,Tugbahan Yilmaz Alic,Yasemin Topal,Yasemin Topal,Mahmut Kus,Mahmut Kus,Lionel Hirsch,Sophie Fasquel,Mamatimin Abbas +19 more
TL;DR: Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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