Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors
TL;DR: In this article, the effects of post annealing process on the electrical performance and positive bias stability (PBS) of aluminum-zincoxide (AZO) thin film transistors (TFTs) were studied.
Journal ArticleDOI
Influence of interface inhomogeneities in thin-film Schottky diodes
TL;DR: In this article, the authors investigated the effects of device scalability in Schottky diodes and found that reducing the IGZO thickness caused a dramatic deterioration of the currentvoltage characteristics, most notably increasing the reverse current.
Journal ArticleDOI
Titanium doped zinc oxide thin film transistors fabricated by cosputtering technique
Wen Yu,Dedong Han,Huijin Li,Junchen Dong,Xiaobin Zhou,Zhuang Yi,Zhen Luo,Shengdong Zhang,Xing Zhang,Yi Wang +9 more
TL;DR: In this article, the effect of the cosputtering of Ti and ZnO targets on the performance of TiZO TFTs was investigated and the results suggest that the effective Ti doping concentration is significant for excellent electrical properties.
Proceedings ArticleDOI
Bio-functionalization of ZnO water gated thin-film transistors
Mandeep Singh,Mohammad Yusuf Mulla,Kyriaki Manoli,Maria Magliulo,Nicoletta Ditaranto,Nicola Cioffi,Gerardo Palazzo,Luisa Torsi,Maria Vittoria Santacroce,C. Di'Franco,Gaetano Scamarcio +10 more
TL;DR: The deposited streptavidin layer can be prospectively further used for the immobilization and orientation of biotinylated recognition elements in view of the use of ZnO TFTs as electronic biosensors for real-life applications.
Journal ArticleDOI
Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs
Guangwei Xu,Ming Liu,Yang Yang,Le Cai,Zhengxu Wang,Quantan Wu,Congyan Lu,Zhiyu Zhao,Yepin Zhao,Geng Di,Ling Li +10 more
TL;DR: In this article, the authors performed gated four-probe measurements on amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to extract their intrinsic mobility and contact resistance as functions of gate voltage and temperature.
References
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TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Journal ArticleDOI
Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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