Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric
TL;DR: In this paper , a bilayer gate dielectric was used to improve the performance of a top-contact bottom-gated SnO2 thin-film transistor (TFT).
Book ChapterDOI
TFT materials and devices
TL;DR: In this article, a TFT device structure comprises several material layers, including metallic gate electrode, gate dielectric film, semiconductor channel, and source/drain electrodes, which is similar to metal-oxide-semiconductor field effect transistor (MOSFET).
Journal ArticleDOI
Sb-implanted ZnO ultra-thin films
Salvatrice Millesi,Maria R. Catalano,Giuliana Impellizzeri,Isodiana Crupi,Graziella Malandrino,Francesco Priolo,Antonino Gulino +6 more
TL;DR: In this paper, the first example of Sb-implantation in ZnO films obtained by MOCVD was presented, where the Sb ion was implanted in the Zn2H2O·CH3(OCH2CH2)2OCH3 precursor on ITO substrates.
Journal ArticleDOI
Effects of hydrogen plasma treatment on the physical and chemical properties of tin oxide thin films for ambipolar thin-film transistor applications
TL;DR: In this article , the physical and chemical properties of H2 plasma-treated tin oxide (SnOX) thin films, followed by their applications in ambipolar thin-film transistors (TFTs), were investigated.
Journal ArticleDOI
Low-temperature formation of high-mobility a-InGaZnOx films using plasma-enhanced reactive processes
TL;DR: In this article, the authors demonstrated the low-temperature fabrication of high-mobility a-InGaZnOx (a-IGZO) films using plasma-enhanced reactive processing.
References
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.