Oliver Ambacher

TL;DR: In this article, the effect of the substrate capacitances and termination on the effective C ISS, C OSS, C RSS device capacitance and switch-node capacitance C SW, switching energy E SW and gate-charge Q G in half-bridges is analyzed.

TL;DR: In this article, the properties of various mHEMT technologies and their advantages for millimeter-wave (mmW) power amplification are presented and an experimental determination of the most suitable transistor technology (i.e. gate-length, number of fingers, gatewidth and bias) for obtaining maximum gain, maximum output power and maximum power added efficiency at a given frequency of 210 GHz is determined.

TL;DR: In this article, a confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity.

TL;DR: In this article, the structural and optoelectronical characterisation of ultra-thin In-rich InxGa1-xN (0.56 < x < 1) metal-semiconductor-metal photodetectors designed for standing wave intensity profile measurements at the wavelength of He-Ne laser was reported.

TL;DR: In this article, the impact of device processing and plasma treatments at different plasma conditions on the electronic transport properties of GaN/AlGaN/GaN heterostructures was investigated as well as annealing in nitrogen atmosphere at 425°C.