O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
g values of effective mass donors in Al x Ga 1 − x N alloys
M. W. Bayerl,Martin S. Brandt,T. Graf,Oliver Ambacher,Jacek A. Majewski,Martin Stutzmann,Donat Josef As,Klaus Lischka +7 more
TL;DR: In this paper, an isotropic g factor of 19475 was obtained for zinc-blende GaN and wurtzite GaN alloys, and the g tensors of the silicon effective mass donor in these materials were determined experimentally.
Journal ArticleDOI
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
Kathrin Frei,Raúl Trejo-Hernández,S. Schütt,Lutz Kirste,Mario Prescher,Rolf Aidam,Stefan Müller,Patrick Waltereit,Oliver Ambacher,Oliver Ambacher,Michael Fiederle +10 more
TL;DR: In this paper, ScxAl1-xN samples were grown by plasma-assisted MBE on GaN-on-sapphire templates under a variety of growth conditions and pulsed supply of Sc and Al.
Journal ArticleDOI
Mechanism of Cluster Formation in a Clean Silane Discharge
TL;DR: In this paper, the formation of hydrogenated silicon clusters in a clean silane glow discharge with elastic light scattering was studied and the data were complemented by mass spectrometric measurements and theoretical modeling.
Journal ArticleDOI
Strain- and pressure-dependent RF response of microelectromechanical resonators for sensing applications
K. Brueckner,Volker Cimalla,F. Niebelschütz,Ralf Stephan,Katja Tonisch,Oliver Ambacher,Matthias Hein +6 more
TL;DR: In this article, a semiconductor fabrication process has been applied to prepare resonant AlN and SiC beams operating at frequencies between 0.1 and 2.1 MHz, and the metallized beams were actuated in a permanent magnetic field of about 0.5 T by the Lorentz force.
Proceedings ArticleDOI
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
M. Caesar,Michael Dammann,Vladimir Polyakov,Patrick Waltereit,Wolfgang Bronner,M. Baeumler,Rudiger Quay,Michael Mikulla,Oliver Ambacher +8 more
TL;DR: In this article, the effect of RF stress at 10 GHz and DC stress on AlGaN/GaN HEMTs have been investigated by comparing static and transient characteristics before and after stress.