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Oliver Ambacher

Researcher at Fraunhofer Society

Publications -  862
Citations -  29006

Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.

Papers
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Journal ArticleDOI

Kinetic Monte Carlo simulation of SiC nucleation on Si(111)

Alexander Schmidt, +5 more
- 01 Jan 2004 - 
TL;DR: In this paper, solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon and the early stages of the carbon interaction with silicon are not well understood.
Journal ArticleDOI

Stress Control in 3C-SiC Films Grown on Si(111)

Charbel Zgheib, +4 more
- 01 Jun 2004 - 
TL;DR: In this paper, the effect of Ge coverage prior to carbonization, on the stress state in 3C-SiC thin films grown by solid source MBE on Si (111) was reported.
Proceedings ArticleDOI

Compact W-band receiver module on hybrid liquid crystal polymer board

Markus Rosch, +6 more
TL;DR: A broadband receiver module operating in the W-band for radar and imaging applications with compact packaging compared to traditional split block technique is realized using printed circuit board technology and a high density polyethylene lens.
Proceedings ArticleDOI

Monolithic integrated 210 GHz couplers for balanced mixers and image rejection mixers

D. Lopez-Diaz, +6 more
TL;DR: A Lange coupler and a Wilkinson power divider have been successfully realized using a metamorphic high electron mobility transistor (mHEMT) monolithic microwave integrated circuit (MMIC) process to enable the integration of balanced mixers and image rejection mixers above 200 GHz as discussed by the authors.
Journal ArticleDOI

The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures

B. E. Foutz, +7 more
- 01 Jan 1999 - 
TL;DR: In this article, a self-consistent 1-D Schrodinger-Poisson solver modified to incorporate the effects of spontaneous and piezoelectric polarization was used to find the two-dimensional electron gas concentrations in these structures.