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Oliver Ambacher

Researcher at Fraunhofer Society

Publications -  862
Citations -  29006

Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.

Papers
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Journal ArticleDOI

AlN/Diamond np-junctions

Christoph E. Nebel, +6 more
- 01 Oct 2003 - 
TL;DR: In this paper, the first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy, which consists of a silicon doped AlN epitaxial film on (100) naturally boron-doped (p-type) diamond substrate.
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Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Oliver Ambacher, +6 more
- 24 May 2021 - 
TL;DR: In this paper, the piezoelectric and spontaneous polarization induced surface and interface charges determined to the ones predicted and measured in heterostructures with GaxAl1−xN and InxAl1+xN barriers are compared.
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2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz

B. Rosener, +7 more
- 15 Sep 2011 - 
TL;DR: A 2 μm semiconductor disk laser emitting in a single longitudinal mode with a linewidth in the <10 kHz range is demonstrated and a heterodyne detection scheme was used for precise linwidth measurements.
Proceedings ArticleDOI

Metamorphic HEMT technology for submillimeter-wave MMIC applications

Arnulf Leuther, +7 more
TL;DR: In this article, a 50 and 35 nm mHEMT transistors were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond.
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Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors

Nayeli Espinosa, +6 more
- 01 Apr 2015 - 
TL;DR: In this article, the authors presented the successful detection of different target-DNA concentrations using AlGaN/GaN high electron mobility field effect transistors (HEMTs), and the gate was bio-functionalized with two different densities of complementary DNA before application of target DNA.