Oliver Ambacher

TL;DR: In this paper, an alternative route to improve the epitaxial growth of 3C-SiC(100) on Si(100), which consists in covering the silicon wafers with germanium prior to the carbonization step of the silicon substrate, was developed.

TL;DR: In this article, a comparison between a 35-nm and a 50-nm gate-length metamorphic high-electron-mobility transistor technology was made for an extended W-band with an operating frequency between 67-116 GHz.

TL;DR: Surprisingly, a very simple "stripe" geometry is found to yield highly reproducible fracture patterns, which are convenient templates for fault-tolerant NW fabrication.

TL;DR: In this paper, a new concept for the low-frequency dispersion aspect of large-signal modeling of microwave III-V field effect transistors is presented, which circumvents the integrability problem between the small signal transconductance GmRF and the output conductance GdsRF by means of an integral formulation and simultaneously yields a proper description of the drain channel current in the small and large signal regime.

TL;DR: A wireless data link using active MMIC components at a carrier frequency of 220 GHz is supporting record data rates of up to 30 Gbit/s and receiver sensitivity measurements are presented.