O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
GaN polarity domains spatially resolved by x-ray standing wave microscopy
Michael Drakopoulos,Jörg Zegenhagen,Tien-Lin Lee,A. A. Snigirev,Irina Snigireva,Volker Cimalla,Oliver Ambacher +6 more
TL;DR: In this article, a microprobe technique based on the X-ray standing wave (XSW) method was proposed to study the crystallographic polarity from inversion domains in GaN-based lateral polarity heterostructures.
Proceedings ArticleDOI
Linear temperature sensors in high-voltage GaN-HEMT power devices
Richard Reiner,Patrick Waltereit,Beatrix Weiss,M. Wespel,Dirk Meder,Michael Mikulla,Rudiger Quay,Oliver Ambacher +7 more
TL;DR: In this article, a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor is presented, which is fabricated by using a interconnect metallization without additional process steps.
Proceedings Article
A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs
Dirk Schwantuschke,Matthias Seelmann-Eggebert,Peter Brückner,Rudiger Quay,Michael Mikulla,Oliver Ambacher,Ingmar Kallfass +6 more
TL;DR: In this paper, the authors present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm.
Proceedings ArticleDOI
Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications
Richard Reiner,Patrick Waltereit,Fouad Benkhelifa,Stefan Müller,M. Wespel,Rudiger Quay,Michael Schlechtweg,Michael Mikulla,Oliver Ambacher +8 more
TL;DR: In this paper, the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly efficient fast-switching power converters is reported.
Proceedings ArticleDOI
Efficient AlGaN/GaN HEMT Power Amplifiers
Rudiger Quay,F. van Raay,Jutta Kuhn,Rudolf Kiefer,Patrick Waltereit,M. Zorcic,M. Musser,Wolfgang Bronner,Michael Dammann,Matthias Seelmann-Eggebert,Michael Schlechtweg,Michael Mikulla,Oliver Ambacher,J. Thorpe,K. Riepe,F. van Rijs,M. Saad,L. Harm,T. Rodle +18 more
TL;DR: In this paper, the authors describe efficient GaN/AlGaN HEMTs and MMICs for L/S-band (1-4 GHz) and X-band frequencies (8-12 GHz) on three-inch s.i.c substrates.