O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
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Experimental evidence of different hydrogen donors in n -type InN
Giorgio Pettinari,Francesco Masia,Mario Capizzi,Antonio Polimeni,Maria Losurdo,Giovanni Bruno,Tong-Ho Kim,Soojeong Choi,April S. Brown,Vadim Lebedev,Volker Cimalla,Oliver Ambacher +11 more
TL;DR: The multiform donor nature of hydrogen in n-type indium nitride is experimentally observed in samples exposed to atomic hydrogen as mentioned in this paper, which reveals a tenfold increase in electron concentration and the formation of a shallow donor band upon hydrogen incorporation.
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Ion‐Induced Modulation of Channel Currents in AlGaN/GaN High‐Electron‐Mobility Transistors
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Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
Jana Ligl,Stefano Leone,Christian Manz,Lutz Kirste,Philipp Doering,Theodor Fuchs,Mario Prescher,Oliver Ambacher,Oliver Ambacher +8 more
TL;DR: In this paper, the impact of growth parameters on thin AlScN/GaN heterostructures was investigated, with the focus on surface morphology, crystal quality, and incorporation of impurities.
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Investigations of MBE grown InN and the influence of sputtering on the surface composition
Stefan Krischok,V. Yanev,O. Balykov,Marcel Himmerlich,Juergen A. Schaefer,R. Kosiba,Gernot Ecke,I. Cimalla,Volker Cimalla,Oliver Ambacher,Hai Lu,William J. Schaff,L.F. Eastman +12 more
TL;DR: In this article, X-ray photoelectron spectroscopy (XPS), ultraviolet photo-electron (UPS), Auger electron spectrograms (AES), and electron energy loss spectrograph (EELS) were used to determine the chemical composition of the sample surfaces before and after ion bombardment.
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DNA‐sensor based on AlGaN/GaN high electron mobility transistor
Stefan U. Schwarz,Stefan U. Schwarz,Stefanie Linkohr,Pierre Lorenz,Stefan Krischok,Takako Nakamura,Volker Cimalla,Christoph E. Nebel,Oliver Ambacher,Oliver Ambacher +9 more
TL;DR: In this article, a novel HEMT-based DNA hybridization sensor is presented, which uses a system of linker molecules to covalently bond the probe DNA to the semiconductor surface.