O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
More filters
Journal ArticleDOI
Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth
Vadim Lebedev,Taro Yoshikawa,Christian Giese,Lutz Kirste,Agnė Žukauskaitė,Andreas Graff,Frank Meyer,Frank Burmeister,Oliver Ambacher +8 more
TL;DR: In this article, it is shown that the diamond MTPs retain a thermodynamically stable structure on the micrometer-scale and can be controllably reproduced using specific nucleation and growth conditions.
Proceedings ArticleDOI
A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Fabian Thome,Oliver Ambacher +1 more
TL;DR: In this article, a distributed power amplifier (DPA) millimeter-wave integrated circuit (MMIC) with high output power, high gain, and low noise figure is presented.
Proceedings ArticleDOI
Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Stefan Moench,Ingmar Kallfass,Richard Reiner,Beatrix Weiss,Patrick Waltereit,Rudiger Quay,Oliver Ambacher +6 more
TL;DR: In this article, a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology is presented.
Journal ArticleDOI
Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis
Taro Yoshikawa,David Herrling,Frank Meyer,Frank Burmeister,Christoph E. Nebel,Oliver Ambacher,Oliver Ambacher,Vadim Lebedev +7 more
TL;DR: A simple and effective method to extend the area of bias enhanced nucleation (BEN) for heteroepitaxial diamond growth is introduced in this paper, where two-inch substrates are placed on a flat and smooth surface of approximately 3 in. Ir/YSZ/Si(001) substrate using the 1 mm thick half-ring plates.
Journal ArticleDOI
Degradation processes in the cellulose/ N -methylmorpholine- N -oxide system studied by HPLC and ESR. Radical formation/recombination kinetics under UV photolysis at 77 K
TL;DR: In this paper, the formation and recombination rates of radical reaction depend on cellulose concentration in cellulose/NMMO solutions and additional ingredients, e.g., Fe(II) and propyl gallate.