O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
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Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
TL;DR: In this article, the basic operation principle for MEMS with wide band gap semiconductors is described, and the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.
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Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
Michael K. Kelly,Robert P. Vaudo,Vivek M. Phanse,L. Görgens,Oliver Ambacher,Martin Stutzmann +5 more
TL;DR: In this article, a free-standing GaN, nearly equal in area to the original 2-inch wafer, was produced from 250-300 µm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE), using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface.
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Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
H. Angerer,D. Brunner,F. Freudenberg,Oliver Ambacher,Martin Stutzmann,R. Höpler,T. Metzger,E. Born,Günther Dollinger,Andreas Bergmaier,S. Karsch,H. J. Körner +11 more
TL;DR: In this article, the exact Al mole fraction and the biaxial strain of the alloys can be calculated by an additional determination of a, using asymmetric reflections, and the results obtained by x-ray diffraction and elastic recoil detection provide evidence for the validity of Vegard's law in the AlGaN system.
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Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
Oliver Ambacher,Martin S. Brandt,Roman Dimitrov,T. Metzger,Martin Stutzmann,Roland A. Fischer,Alexander Miehr,Andreas Bergmaier,Günther Dollinger +8 more
TL;DR: In this paper, the thermal stability of thin films of Group III nitrides prepared by low-pressure chemical vapor deposition from organometallic precursors was investigated by elastic recoil detection analysis (ERDA).
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Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements
C. Deger,E. Born,H. Angerer,Oliver Ambacher,Martin Stutzmann,Jörg Hornsteiner,Evelyn Riha,Gerhard Fischerauer +7 more
TL;DR: In this article, the surface acoustic-wave (SAW) delay lines on AlxGa1−xN/c-Al2O3 were used to determine the sound velocity in wurtzite Alx Ga1−XN.