Oliver Ambacher

TL;DR: The results show a high dependency of the on-resistance increase on interfaces in the gate-drain access region of GaN-on-Si MIS-HEMTs for high voltage stress and regeneration of the device.

TL;DR: In this paper, a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology is presented, which achieves drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dBm respectively for the two frequency bands 2.05-2.22 GHz and 2.58 GHz at around 2-3 dB of compression level.

TL;DR: In this article, a W-band I/Q-down-conversion monolithic microwave integrated circuit (MMIC) is presented based on the Fraunhofer IAF 50-nm gate-length metamorphic high-electron-mobility transistor technology and contains an RF 3-dB quadrature coupler, two subharmonically-pumped mixer cells, two low-noise amplifiers, and an LO chain including a frequency tripler, a band-pass filter, and two power amplifiers.

TL;DR: A frequency multiplier-by-twelve monolithic integrated circuit (MMIC), providing a stable signal source in the W-band and a receiver MMIC with low noise amplifier and in-phase/quadrature-phase (I/Q) down-conversion mixers, both packaged in separate split-block modules, are the key elements of the bi-static radar system.

TL;DR: In this paper, a two-tone intermodulation distortion behavior for the class-BJ power amplifier mode is studied, where the right phase combination of fundamental and second harmonic terminations leads to new output solutions where the power-efficiency is maintained optimum.