Oliver Ambacher

TL;DR: In this article, both the magnitude and the characteristic frequency of the generation-recombination noise power density in Si-doped aluminum nitride (AlN:Si) were found to be thermally activated.

TL;DR: In this article, the authors have grown GaInN heterostructures and quantum wells by low-pressure metalorganic vapour-phase epitaxy and analyzed the results by X-ray diffraction, optical spectroscopy and atomic force microscopy.

TL;DR: In this paper, the authors presented the first time the broadband continuous-class F3 mode power amplifier (PA) extended to include a variable reactance third harmonic impedance and demonstrated that the different reactive impedance solutions carried out at the single frequency can then be translated into frequency domain, allowing the design of high power-efficiency broadband power amplifiers.

TL;DR: In this article, the origin of the yellow luminescence (YL) in GaN films was investigated as a function of deposition temperature between 650 and 1100 °C, in relation with the microstructure and the contamination in carbon, oxygen, and hydrogen determined by thermal effusion measurements.

TL;DR: In this paper, the influence of the Al content on the mobility of the two-dimensional electron gas (2DEG) in GaN/AlxGa1−xN/GaN heterostructures was studied by employing the ensemble Monte Carlo method.