O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution
Birte-Julia Godejohann,Erdin Ture,Stefan Müller,Mario Prescher,Lutz Kirste,Rolf Aidam,Vladimir Polyakov,Peter Brückner,Steffen Breuer,Klaus Köhler,Rudiger Quay,Oliver Ambacher +11 more
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Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction
Zhenyang Zhong,Oliver Ambacher,A. Link,Vaclav Holy,J. Stangl,Rainer T. Lechner,Tomas Roch,Gerrit E. W. Bauer +7 more
TL;DR: In this paper, X-ray reflectivity and diffraction measurements were performed on Ga-face AlGaN/GaN heterostructures to determine the influence of interface roughness and GaN domain boundaries scattering on the electron mobility of polarization induced two-dimensional electron gases.
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Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Peter Brückner,Rudolf Kiefer,C. Haupt,Arnulf Leuther,Stefan Müller,Rudiger Quay,Dirk Schwantuschke,Michael Mikulla,Oliver Ambacher +8 more
TL;DR: In this paper, a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers based on 100 nm gate technology is presented, which includes alloyed ohmic contacts, T-shaped 100 nm gates, air-bridges, MIM capacitors, inductors, and a full through wafer viahole backside process.
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Structures of (C5H5N)3Al(N3)3, [Me2N(CH2)3]2Al(N3) and Me2(N3)Al(H2NBut). Low-temperature OMVPE of AlN in the absence of ammonia
Roland A. Fischer,Alexander Miehr,Harald Sussek,Hans Pritzkow,Eberhardt Herdtweck,Jens Müller,Oliver Ambacher,Thomas Metzger +7 more
TL;DR: New Lewis-base stabilized monomeric azido alanes are synthesized by salt metathesis from the corresponding chloro alanes and an excess of sodium azide as discussed by the authors.
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GalnN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
A. Sohmer,Jürgen Off,H. Bolay,Volker Härle,V. Syganow,Jin Seo Im,Veit Wagner,F. Adler,Andreas Hangleiter,A. Dörnen,F. Scholz,D. Brunner,Oliver Ambacher,H. Lakner +13 more
TL;DR: The dependence of the In-incorporation efficiency and the optical properties of MOVPE-grown GalnN/GaN-heterostructures on various growth parameters has been investigated in this article.