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Oliver Ambacher

Researcher at Fraunhofer Society

Publications -  862
Citations -  29006

Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.

Papers
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Journal ArticleDOI

Rayleigh waves in nonpolar Al0.7Sc0.3N(11 2¯0) films with enhanced electromechanical coupling and quality factor

Niclas M. Feil, +4 more
- 07 Nov 2022 - 
TL;DR: In this article , the growth of 1µm nonpolar a-plane Al0.7Sc0.3N thin films on an r-plane sapphire Al2O3(1[formula: see text]02) via magnetron sputter epitaxy was reported.
Journal ArticleDOI

Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs

Stefanie Linkohr, +10 more
- 01 Mar 2012 - 
TL;DR: In this article, the impact of SF6 plasma treatments on the electronic transport properties of GaN/AlGaN/GaN heterostructures was investigated by employing different plasma conditions as well as annealing in nitrogen atmosphere at 425 °C.
Proceedings ArticleDOI

Pt/GaN based Schottky diodes for gas sensing applications

Muhammad Ali, +5 more
TL;DR: In this article, the performance of Schottky diodes with different thickness of the catalytic metal was investigated as hydrogen gas detectors, and the sensitivity to hydrogen gas was investigated in dependence on the active area, the Pt thickness and the operating temperature for 1 vol% hydrogen in synthetic air.
Proceedings Article

Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation

Friedbert van Raay, +6 more
TL;DR: In this paper, a combined integral transform and state description is applied to an emerging AlGaN/GaN HEMT technology with a gatelength of 0.1 μm.
Journal ArticleDOI

Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy

M. Niebelschütz, +8 more
- 01 May 2008 - 
TL;DR: In this article, high quality InN and GaN nanocolumns of different length and diameter were electrically characterized directly and non-destructively by Atomic Force Microscopy (AFM) as a function of the column diameter.