O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Proceedings ArticleDOI
Millimeter-Wave Single-Pole Double-Throw Switches Based on a 100-nm Gate-Length AlGaN/GaN-HEMT Technology
TL;DR: In this article, the design, analysis, and performance of four millimeter-wave SPDT switch MMICs are presented, which utilize a 100nm gate-length GaN-on-SiC technology and cover four different frequency ranges almost without gap from 28 to 310 GHz.
Journal ArticleDOI
High efficient terahertz emission from InN surfaces
Volker Cimalla,B. Pradarutti,Gabor Matthäus,Claudia Brückner,Stefan Riehemann,Gunther Notni,Stefan Nolte,Andreas Tünnermann,Vadim Lebedev,Oliver Ambacher +9 more
TL;DR: In this article, the authors measured terahertz radiation from InN and compared it with p-InAs excited by femtosecond optical pulses at 1060 and 800 nm.
Journal ArticleDOI
Impact of silicon incorporation on the formation of structural defects in AlN
M. Hermann,Florian Furtmayr,Francisco M. Morales,Oliver Ambacher,Martin Stutzmann,Martin Eickhoff +5 more
TL;DR: In this paper, the impact of Si impurities on the structural properties of AlN, grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire is studied.
Journal ArticleDOI
Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage
Michael Basler,Richard Reiner,Stefan Moench,Patrick Waltereit,Rudiger Quay,Ingmar Kallfass,Oliver Ambacher +6 more
TL;DR: In this article, a large-area lateral field effect rectifier (LFER) based on a normally-off HEMT in reverse conduction with very low threshold voltage and shorted gate-source terminal is presented.
Proceedings ArticleDOI
8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
TL;DR: In this paper, the authors report on two wide bandwidth monolithic power amplifiers suitable for electronic warfare (EW) systems and other wide bandwidth applications up to the Q-band, based on a 100nm AlGaN/GaN T-gate HEMT microstrip transmission line MMIC technology.