O
Oliver Ambacher
Researcher at Fraunhofer Society
Publications - 862
Citations - 29006
Oliver Ambacher is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 64, co-authored 848 publications receiving 26256 citations. Previous affiliations of Oliver Ambacher include Osram & Siemens.
Papers
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Journal ArticleDOI
Nanoelectromechanical devices for sensing applications
V. Cimalla,F. Niebelschütz,Katja Tonisch,Ch. Foerster,K. Brueckner,I. Cimalla,T. Friedrich,Jörg Pezoldt,Ralf Stephan,Matthias Hein,Oliver Ambacher +10 more
TL;DR: In this article, fabrication, operation, and sensing properties of ceramic wide band gap (AlN and SiC) NEMS sensors are demonstrated, where the internal strain of such beams can be used to improve the resonant performance of the devices.
Journal ArticleDOI
Energy gap and optical properties of InxGa1–xN
Friedhelm Bechstedt,Jürgen Furthmüller,Mohamed Ferhat,Lara K. Teles,L. M. R. Scolfaro,J. R. Leite,V. Yu. Davydov,Oliver Ambacher,Rüdiger Goldhahn +8 more
TL;DR: In this article, an energy gap of InN < 1 eV and a nonparabolic absorption edge was found for InN 1-x N. The results are critically discussed in the light of recent experiments.
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Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
Oliver Ambacher,Martin Eickhoff,A. Link,M. Hermann,Martin Stutzmann,Fabio Bernardini,Vincenzo Fiorentini,Y. Smorchkova,James S. Speck,Umesh K. Mishra,William J. Schaff,V. Tilak,L.F. Eastman +12 more
TL;DR: In this paper, a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases are presented.
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Raman spectra of isotopic GaN
Jian Zhang,T. Ruf,Manuel Cardona,Oliver Ambacher,Martin Stutzmann,Jan-Martin Wagner,Friedhelm Bechstedt +6 more
TL;DR: In this paper, the first-order Raman spectra of wurtzite GaN made from natural Ga and isotopically pure natural N (99.63% ) were measured at low temperature.
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AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
TL;DR: In this paper, a single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces, where the GaN layer is deposited by flow modulation organometallic vapor phase epitaxy at temperatures in excess of 1000°C.