Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Expeditious and eco-friendly solution-free self-patterning of sol–gel oxide semiconductor thin films
TL;DR: In this paper, a solution-free self-patterning method was proposed to fabricate patterned indium gallium zinc oxide (IGZO) thin-film transistors (TFTs).
Journal ArticleDOI
The effect of surface energy characterized functional groups of self-assembled monolayers for enhancing the electrical stability of oxide semiconductor thin film transistors.
Sung-Eun Lee,Hyun-Jae Na,Eun Goo Lee,Jintaek Park,Kyung Ho Kim,Changik Im,Junwoo Park,Yong Jun Gong,Youn Sang Kim +8 more
TL;DR: The SAM treatment, particularly at the SAM functional group having lower surface energy, makes oxygen molecules difficult to be adsorbed onto IGZO, and such an effect much improves positive bias stability (PBS) and clockwise hysteresis stability to the same tendency.
Journal ArticleDOI
Flexible Platform Oriented: Unipolar‐Type Hybrid Dual‐Channel Scalable Field‐Effect Phototransistors Array Based on Tellurium Nanowires and Tellurium‐Film with Highly Linear Photoresponsivity
Muhammad Naqi,Kyung Hwa Choi,Y. Cho,Hyun Yeol Rho,Haewon Cho,Pavan Pujar,Na Liu,Hyun-Suk Kim,Jae-Young Choi,Sunkook Kim +9 more
TL;DR: In this paper , a novel method is introduced to synthesize the uniform hybrid structure of tellurium nanowires (TeNWs) and Te-film for flexible field effect transistor (FET) array device to exhibit excellent electrical, mechanical and optical performance.
Journal ArticleDOI
Ultra-thin-film transistors based on ultra-thin amorphous ZnSnO films
Shilu Yue,Jianguo Lu,Jianguo Lu,Rongkai Lu,Siqin Li,B. Lu,Xifeng Li,Jianhua Zhang,Yu-Jia Zeng,Zhizhen Ye +9 more
TL;DR: In this article, annealing treatment exhibits extreme importance for the ultra-thin transistors to obtain better performance as oxygen vacancy is controlled easily in the ultra thin amorphous ZnSnO (a-ZTO) films.
Journal ArticleDOI
Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
TL;DR: In this article, the performance of spray pyrolysis deposition of zinc oxide (ZnO) was investigated for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
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High-κ gate dielectrics: Current status and materials properties considerations
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
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TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.