Amkor Technology

About: Amkor Technology is a company organization based out in Tempe, Arizona, United States. It is known for research contribution in the topics: Semiconductor package & Substrate (printing). The organization has 1069 authors who have published 1106 publications receiving 26778 citations. The organization is also known as: Amkor & Amkor Technology, Inc..

Membrane die attach circuit element package and method therefor

Abstract: A circuit element package has a substrate having a plurality of electrically conductive patterns, a die pad, and an access hole formed through the die pad and substrate. A plurality of leads is coupled to the substrate. A circuit element die is attached to the die pad wherein a first sensor port is positioned over the access hole. A die attach membrane is provided for attaching the circuit element die to the die pad. The die attach membrane allows the circuit element die to sense ambient while protecting the circuit element die from environmental damage. An encapsulant is used for covering portions of the circuit element die.

Design for board trace reliability of WLCSP under drop test

Abstract: Through an aggressive product development program which includes experiment and simulation, Amkor has developed the next level of WLCSP (CSPnl™), a product which exhibits superior board level reliability when subjected to drop impact, a strong requirement for portable electronics. Failure mechanism of WLCSP under drop test has been established. Depending on type of WLCSP and test board design, 3 primary failure modes can be observed, i.e. copper (Cu) board trace crack, Cu RDL (Redistribution Layer) vertical crack and Cu/UBM (Under Bump Metallization) delamination. CSPnl can exhibit distinct failure modes under different test board and/or CSPnl designs, resulting in a vast difference in drop test lifetimes. The primary failure mode is shifted whenever the weakest link is removed through design improvement. This paper will focus on detailed analysis of copper board trace crack under drop test, using an integrated approach of testing, failure analysis, material characterization and modeling. Board design guidelines are formulated to understand the effects of I/O position, board trace routing direction, board trace width, tear drop design, PCB pad size, stack-up thickness, and alloy materials on board trace reliability. Comparison is also made on possible impact on Cu RDL reliability.

Fingerprint sensor and manufacturing method thereof

Abstract: A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

Characterization of intermetallic compound (IMC) growth in Cu wire ball bonding on Al pad metallization

Abstract: As one of the alternative materials in chip interconnection, copper wire has become popular because of its lower cost and higher electrical conductivity than gold wire. Moreover it is known that long term reliability performance at high temperature of copper wire is better than that of gold wire because of slower Cu/Al intermetallic compound (IMC) growth than that of Au/Al intermetallics. However, majority of copper wire bonding development works has been focused on the material and/or process optimization and qualification so far, now it is time that we need to understand more on the Cu/Al IMC growth behavior to prevent IMC related failures in copper wire field application. So, in this paper, we aimed to generate Cu/Al IMC growth model based on the experimental result depends on high temperature storage (HTS) time and temperature and also tried to suggest Cu/Al IMC thickness guideline to minimize IMC degradation. In this experiment, Al pad chips were bonded with 99.99% purity of copper wire and Pd coated copper wire and some of them were encapsulated with epoxy mold compound. The samples were storaged at the temperature range from 150 C to 250 C upto 1000 hrs. IMC phase and thickness were analyzed by the help of SEM and EDX. In order to generate Cu/Al growth model, reaction rate (K) and activation energy (AQ) were calculated with above experimental results by using Arrhenius diffusion equation. Also, in order to investigate the Cu/Al IMC effect on the bondability, ball shear strength was measured and its result was correlated with IMC thickness. According to this paper, we could derive Cu/Al IMC thickness prediction model and suggest IMC thickness guideline that can minimize IMC failures.