Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TLDR
The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.Abstract:
Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.read more
Citations
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Journal ArticleDOI
Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor
Yana Gao,Jianhua Zhang,Xifeng Li +2 more
TL;DR: In this article, a solution-processed top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high- $k$ zirconium oxide (ZrOx) dielectric were fabricated by spin coating or screen printing.
Journal ArticleDOI
Room temperature self-assembled growth of vertically aligned columnar copper oxide nanocomposite thin films on unmatched substrates
Y. Wang,Y. Wang,Jaafar Ghanbaja,Stéphanie Bruyère,Flavio Soldera,David Horwat,F. Mücklich,Jean-François Pierson +7 more
TL;DR: This work reports the self-assembled growth of vertically aligned columnar Cu2O + Cu4O3 nanocomposite thin films on glass and silicon substrates by reactive sputtering at room temperature.
Journal ArticleDOI
Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer
Yao Chen,Xinming Zhuang,Elise A. Goldfine,Vinayak P. Dravid,Michael J. Bedzyk,Wei Huang,Antonio Facchetti,Tobin J. Marks +7 more
TL;DR: In this article, a new approach to the layer-by-layer solution-processed fabrication of organic/inorganic hybrid self-assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed.
Book ChapterDOI
Fundamentals of nano/microfabrication and scale effect
TL;DR: In this article, the authors describe the principles and practice of nano/micro-scale fabrication technologies and discuss the scale and shape effect in molecular sensing, and consider how scaling down of sensor dimensions affect the overall performance of molecular sensors.
Journal ArticleDOI
Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors
Jong-In Kim,Ki Soo Chang,Dong Uk Kim,In-Tak Cho,Chan-Yong Jeong,Daeun Lee,Hyuck-In Kwon,Sung Hun Jin,Jong-Ho Lee +8 more
TL;DR: In this article, the authors investigated the self-heating effect of short-channel amorphous In-Ga-Zn-O TFTs by using high-resolution thermoreflectance microscopy.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Book
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TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Polymer‐Fullerene Bulk‐Heterojunction Solar Cells
Christoph J. Brabec,Srinivas (Jimmy) Gowrisanker,Jonathan Halls,Darin W. Laird,Shijun Jia,Shawn P. Williams +5 more
TL;DR: An outlook is presented on what will be required to drive this young photovoltaic technology towards the next major milestone, a 10% power conversion efficiency, considered by many to represent the efficiency at which OPV can be adopted in wide-spread applications.