Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
Optical emission in hexagonal SiGe nanowires
Xavier Cartoixà,Maurizia Palummo,Håkon Ikaros T. Hauge,Erik P. A. M. Bakkers,Riccardo Rurali +4 more
TL;DR: These findings pave the way to the development of silicon-based optoelectronic devices, thus far hindered by the poor light emission efficiency of cubic Si, by showing that a suitable mixing of hexagonal Si and hexagonal Ge yields a direct bandgap with an optically permitted transition.
Journal ArticleDOI
Progress toward nanoscale silicon light emitters
TL;DR: In this article, the state-of-the-art in the materials science and device properties of nanoscale silicon-based LED's, including their integration with microelectronic circuits, are reviewed.
Journal ArticleDOI
Optically Polarized 129Xe in NMR Spectroscopy
Tanja Pietraiß,Holly C. Gaede +1 more
Journal ArticleDOI
Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix
Y. P. Guo,Jin-Cheng Zheng,Andrew T. S. Wee,Cheng Hon Alfred Huan,Kai Li,J.S. Pan,Zhe Chuan Feng,Soo Jin Chua +7 more
TL;DR: The dependence of photoluminescence (PL) from SiC nanocrystals embedded in a SiO 2 matrix on annealing is presented in this article, where a combination of high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) transmission spectra and PL results suggest that SiC nanoparticles have been incorporated into the SiO2 matrix and O-deficient defects were formed.
Journal ArticleDOI
Red to green rainbow photoluminescence from unoxidized silicon nanocrystallites
TL;DR: In this article, luminescent silicon was prepared by incorporating H2O2 in the anodizing process, and the results were consistent with a significant reduction of crystallite sizes, and may be explained via novel Si-Si dimer surface states that are induced by quantum confinement.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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