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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Advances in Porous Silicon–Based Nanomaterials for Diagnostic and Therapeutic Applications

TL;DR: In this article, a review of porous silicon (pSi)-based nanomaterials including nanoparticles, nanowires, and thin films is presented, with a focus on their effective use in future clinical settings.
Journal ArticleDOI

Colloidal silicon quantum dots: synthesis and luminescence tuning from the near-UV to the near-IR range

TL;DR: This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs), including both top-down and bottom-up approaches, and their methodological advantages and disadvantages.
Journal ArticleDOI

Photoluminescence of porous Si, oxidized then deoxidized chemically

TL;DR: In this article, the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically was examined and it was shown that photoluminance shifted to higher frequencies and increased in intensity.
Journal ArticleDOI

Visible light emission from Si nanocrystalline composites via reactive evaporation of SiO

TL;DR: In this article, the oxygen content of the deposited films was determined from Rutherford backscattering analysis, and the correlation of the initial oxygen content with the crystallite size and photoluminescence properties was analyzed.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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