Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
On the thermomechanical deformation of silver shape memory nanowires
Harold S. Park,Changjiang Ji +1 more
TL;DR: In this paper, an analysis of the uniaxial thermomechanical deformation of single-crystal silver shape memory nanowires using atomistic simulations is presented.
Journal ArticleDOI
Demonstration of photoluminescence in nonanodized silicon
J. Sarathy,S. Shih,Kim Jung,C. Tsai,K.-H. Li,Dim-Lee Kwong,Joe C. Campbell,Shueh Lin Yau,Allen J. Bard +8 more
TL;DR: In this article, the formation of photoluminescent porous Si in an etchant solution made from the HF•HNO3•CH3COOH system is reported.
Journal ArticleDOI
The evolution of silicon photonics as an enabling technology for optical interconnection
TL;DR: An attempt is made to demonstrate that the integration of photonic and electronic functionality on a silicon substrate has the potential to propel communication beyond the Terabit per second threshold in a widely deployable paradigm.
Patent
Nanoelectronic structure and method of producing such
TL;DR: In this article, a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the volume element is being doped in order to provide a high charge carrier injection into the semiconductor and a low access resistance in an electrical connection.
Journal ArticleDOI
Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films
TL;DR: In this paper, a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface-emitting cold cathode.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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