Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons
Baek Hyun Kim,Chang-Hee Cho,Jin Soo Mun,Min-Ki Kwon,Tae-Young Park,Jong Su Kim,Clare C. Byeon,Jongmin Lee,Seong-Ju Park +8 more
Journal ArticleDOI
Electronics of Colloidal Nanometer Particles
TL;DR: Small colloidal particles and clusters of semiconductors and metals exhibit unusual properties and may be considered as a new physico-chemical dimension between the molecules and the bulk materials as mentioned in this paper.
Journal ArticleDOI
A novel capacitor technology based on porous silicon
TL;DR: In this paper, a capacitance based on an electrochemically etched macroporous silicon substrate and a layered dielectric (ONO) is presented, which can realize values of specific capacitance which so far could only be reached by electrolytic capacitors.
Journal ArticleDOI
Atomistic design of thermoelectric properties of silicon nanowires.
TL;DR: The calculations show that only by reducing the ionic thermal conductivity by about 2 or 3 orders of magnitudes with respect to bulk values, one may attain ZT larger than 1, for 1 or 3 nm wires, respectively.
Journal ArticleDOI
Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence
J. von Behren,J. von Behren,T. van Buuren,T. van Buuren,Margit Zacharias,Margit Zacharias,E. H. Chimowitz,Philippe M. Fauchet +7 more
TL;DR: The role of quantum confinement in the optical properties of silicon nanocrystallites has been investigated in this paper, where the bandgap and luminescence energies have been measured as a function of size for the first time.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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