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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Metal Deposition onto a Porous Silicon Layer by Immersion Plating from Aqueous and Nonaqueous Solutions

TL;DR: In this paper, the local cell mechanism is used to nucleate and grow the local cells of a polysilicon (PS) layer after the immersion plating of Ag, Cu, and Ni.
Journal ArticleDOI

Synthetic Developments of Nontoxic Quantum Dots

TL;DR: Three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements are selected and the myriad of synthetic strategies and surface modification methods to synthesize quantum dots compose of these material systems are discussed.
Journal ArticleDOI

Light-emitting porous silicon: materials science, properties, and device applications

TL;DR: In this paper, a light-emitting porous silicon (LEPSi) that can emit light from the blue part of the spectrum to the infrared beyond 15 /spl mu/m has been demonstrated.
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Porous and nanoporous semiconductors and emerging applications

TL;DR: Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the "nanometer" regime.
Journal ArticleDOI

Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption study

TL;DR: In this article, photo-induced absorption features of ion-implanted Si nanocrystals (NCs) are attributed to carriers in NC quantized states (high energy band) and Si/SiO2 interface states (low energy band).
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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