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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Functionalization of Silicon Nanoparticles via Silanization: Alkyl, Halide and Ester

TL;DR: The feasibility of using silanization as a general tool to functionalize the surface of silicon nanoparticles (NPs) has been investigated in detail in this paper, where silicon NPs were prepared from reduction of silicon tetrachloride with sodium naphthalide.
Journal ArticleDOI

Observations on the surface and bulk luminescence of porous silicon

TL;DR: In this article, the soft x-ray induced photoluminescence of porous silicon in the optical region (200-900 nm) and the Si K-edge xray absorption fine structures of the near edge region were investigated.
Journal ArticleDOI

Room-temperature photoluminescence in structurally disordered SrWO4

TL;DR: In this article, the authors showed that the generation of the intense visible photoluminescent (PL) band in structurally disordered strontium tungstate (SrWO4) compounds was observed at room temperature.
Journal ArticleDOI

Infrared reflectance of thick p-type porous SiC layers

TL;DR: In this paper, the frequency-dependent dielectric function of porous SiC was obtained for a Maxwell-Garnett model with SiC acting as a host material and air cavities acting as the inclusion material.
Journal ArticleDOI

Quantum confinement induced photoluminescence in porous silicon

TL;DR: In this article, an investigation of the red photoluminescence (PL) in uniform layers of porous silicon has revealed an inverse relationship between the PL peak energy and the nanoparticle diameter that is in accord with a quantum confinement mechanism.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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