Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Strong blue light emission from an oxygen‐containing Si fine structure
TL;DR: In this article, a photoluminescence study has been made on an oxygen-containing Si fine structure fabricated by a gas evaporation technique, which is composed of nonspherical particles aggregated together in chain-like or cluster-like structures.
Journal ArticleDOI
Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing
TL;DR: In this article, a SiO2 buffer and annealing treatment under N2 protection was proposed to enhance the photoluminescence of SiNx films. But the SiO buffer was not used for the N 2 protection, and it was not shown that the Si−O and Si−N bonds provide effective luminescent centers and passivate the interface between Si core and the surrounding oxide.
Journal ArticleDOI
Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV range
TL;DR: In this paper, a quantitative determination of optical anisotropy, i.e., the bifregingence, in both p and p+ porous films can be achieved.
Journal ArticleDOI
Porous silicon membranes
TL;DR: In this paper, the authors show that there is essentially no limit to the thickness of porous silicon layers and that self-supporting porous structures can be formed by electrochemical etching through wafers up to 500 μm in thickness.
Journal ArticleDOI
Optical emission from small Si particles
TL;DR: In this article, the optical properties of hydrogen-saturated Si clusters are studied theoretically through an approach that can treat consistently both small molecules and bulk crystals and fully includes electron-electron correlation.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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