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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Preparation of fine silicon particles from amorphous silicon monoxide by the disproportionation reaction

TL;DR: In this paper, fine Si particles have been prepared by the disproportionation reaction of silicon monoxide (SiO), that is: 2SiO → Si + SiO 2 amorphous powders of SiO are heated between 900°C and 1400°C in a flow of Ar and the obtained specimens are analyzed by X-ray powder diffraction and high-resolution transmission electron microscopy.
Journal ArticleDOI

Nanostructured porous silicon–polymer-based hybrids: from biosensing to drug delivery

TL;DR: Porous silicon is an appealing biomaterial due to the ease of tuning its many attractive properties, including pore morphology, photonic properties, biocompatibility, biodegradation and surface chemistry.
Journal ArticleDOI

Ellipsometric study of silicon nanocrystal optical constants

TL;DR: In this article, two dispersion models were used to describe the silicon nanocrystal optical properties: the Bruggeman effective medium approximation model and the Tauc-Lorentz model.
Journal ArticleDOI

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

TL;DR: Property and applications of Si-nc in silicon photonics are reviewed and its sensitization effect on Er ions to achieve infrared light amplification and nonlinear optical effects, which enable fast all-optical switches, are described.
Journal ArticleDOI

Effect of Hydrogen on the Photoluminescence of Si Nanocrystals Embedded in a SiO 2 Matrix

TL;DR: In this paper, hydrogen passivation of Si nanocrystals is shown to result in a redshift of photoluminescence (PL) emission spectra, as well as the more commonly observed intensity increase, with spectra returning to their unpassivated values as hydrogen is removed from the samples by annealing.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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