Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
A sustainable future for photonic colloidal nanocrystals
TL;DR: This review highlights recent advances in the development of heavy-metal-free nanocrystals within the context of specific photonic applications and describes strategies to transfer some of the advantageous nanocrystal features such as shape control to non-toxic materials.
Journal ArticleDOI
Solution Synthesis of Germanium Nanocrystals: Success and Open Challenges
Daniele Gerion,Natalia Zaitseva,Cheng Saw,Maria Francesca Casula,Sirine Fakra,Tony van Buuren,Giulia Galli +6 more
TL;DR: In this paper, a two-step synthesis route that yields nanometer-size crystalline germanium in the form of a black powder is presented, which relies on high temperature decomposition of tetraethylgermane (TEG) in organic solvents.
Journal ArticleDOI
Visible light emission from thin films containing Si, O, N, and H
Brian H. Augustine,Eugene A. Irene,Yunjian He,K. J. Price,Laurie E. McNeil,K. N. Christensen,Dennis M. Maher +6 more
TL;DR: In this article, the fabrication, chemical, optical, and photoluminescence characterization of amorphous silicon-rich oxynitride (SiOxNy:H) thin films by plasmaenhanced chemical-vapor deposition was reported.
Journal ArticleDOI
The temperature dependence of the absorption coefficient of porous silicon
TL;DR: In this article, the spectral behavior and the temperature dependence of the absorption coefficient of microporous silicon films are studied in the energy range of 1.2-3.8 eV, between 7 and 450 K.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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