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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Luminescent Colloidal Silicon Suspensions from Porous Silicon

TL;DR: Transmission electron microscopy analyses show that the Si particles have irregular shapes, with diameters ranging from many micrometers to nanometers, and can be made by the addition of polystyrene to a toluene suspension of the Si nanoparticles and casting of the resulting solution onto a glass slide.
Journal ArticleDOI

Temperature-dependent thermal conductivity of porous silicon

TL;DR: In this paper, the thermal conductivity of electrochemically etched porous silicon (PS) layers was determined over a wide temperature range (T = 35 - 320 K) using the dynamic technique.
Journal ArticleDOI

Silicon nanostructures for bioapplications

TL;DR: In this paper, the authors focus on recent research progress in design, synthesis and bio-applications of two silicon-based nanostructures, zero-dimensional silicon quantum dots and onedimensional silicon nanowires.
Journal ArticleDOI

Light-Emitting Two-Dimensional Ultrathin Silicon Carbide

TL;DR: In this article, the solution exfoliation of 2D SiC nanoflakes with thickness down to 0.5-1.5 nm has been studied and it has been shown that graphitic (0001)/(0001) SiC most possibly has been formed by sonication of wurtzite SiC.
Journal ArticleDOI

Exciton-mediated hydrosilylation on photoluminescent nanocrystalline silicon.

TL;DR: Experiments and observations are presented which indicate that the light promoted hydrosilylation reaction is unique to photoluminescent silicon, and does not function on nonemissive material.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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