Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
Experimental Factors Controlling Analyte Ion Generation in Laser Desorption/Ionization Mass Spectrometry on Porous Silicon
TL;DR: Among the porous semiconductors studied, only porous silicon has the combination of large surface area, optical absorption, and thermal conductivity required for efficient analyte ion generation under the conditions studied.
Journal ArticleDOI
Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters
TL;DR: In this paper, photoluminescence from defect-related states and Si nanoclusters was observed in Si-rich silicon nitride films simultaneously, and the results demonstrate that the luminescence was selected by the excitation energy.
Journal ArticleDOI
Nanostructured surface modification of ceramic-based microelectrodes to enhance biocompatibility for a direct brain-machine interface
TL;DR: The hypothesis that nano-porous silicon may be an ideal material to improve biocompatibility of chronically implanted microelectrodes is supported.
Journal ArticleDOI
Study of the Raman peak shift and the linewidth of light‐emitting porous silicon
TL;DR: In this article, the correlation between the Raman peak shift and the linewidth of porous silicon is studied and the experimental result does not fit with the relationship predicted by the phonon confinement model.
Journal ArticleDOI
Surface control of optical properties in silicon nanoclusters
TL;DR: In this article, the effect of surface passivants on the optical gap of silicon nanoclusters was investigated and it was shown that the specific surface chemistry must be taken into account in order to interpret experimental results.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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