Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
X‐ray‐diffraction investigation of the anodic oxidation of porous silicon
TL;DR: In this paper, the evolution of the lattice mismatch parameter is related to the surface stress variations, and the authors discuss the origin of the strains of as-formed and oxidized porous silicon.
Journal ArticleDOI
Physics and Device Structures of Highly Efficient Silicon Quantum Dots Based Silicon Nitride Light-Emitting Diodes
TL;DR: An overview of the progress in the device physics and fabrications of the Si QD light-emitting diodes (LEDs) including new device structures to improve the light extraction efficiency as well as highlights in the growth of Si QDs and their quantum confinement effects (QCEs) is provided in this paper.
Journal ArticleDOI
Optical losses in porous silicon waveguides in the near-infrared: Effects of scattering
Patrick Ferrand,R. Romestain +1 more
TL;DR: In this paper, the optical losses of porous silicon, in the continuous 0.8-1.6 μm (0.77 −1.55 eV) range, were investigated.
Journal ArticleDOI
Acoustic investigation of porous silicon layers
R.J.M. da Fonseca,J.M. Saurel,Alain Foucaran,J. Camassel,E. Massone,Thierry Taliercio,Y. Boumaiza +6 more
TL;DR: In this paper, the porosity dependence of bulk wave velocities and Young's modulus has also been proposed, and the thicknesses of p+-type PS layers were measured and longitudinal, shear and Rayleigh velocity and Youngs modulus were obtained as a function of porosity.
Journal ArticleDOI
Nanochannel Arrays on Silicon Platforms by Electrochemistry
TL;DR: Nanochannel arrays with diameters as small as 30 nm and aspect ratios up to 250 were prepared on silicon platforms for the first time by electrochemistry, which is a fast, reproducible, and inexpensive technique as discussed by the authors.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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