Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
Reads0
Chats0
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
More filters
Journal ArticleDOI
Biosensing and protein fluorescence enhancement by functionalized porous silicon devices.
TL;DR: This work demonstrates that, among the various PSi configurations for molecular detection, PSi microcavity structure demonstrates the best biosensing performance, reflected through the enhanced luminescence response and the changes in the refractive index.
Journal ArticleDOI
Structure and optical properties of the planar silicon compounds polysilane and wohler siloxene
TL;DR: In this paper, a topotactic reaction from crystalline CaSi${}_{2}$ was performed on planar polysilane and W\"ohler siloxene.
Journal ArticleDOI
Strained Interface Defects in Silicon Nanocrystals
Benjamin G. Lee,Daniel Hiller,Jun-Wei Luo,Octavi E. Semonin,Octavi E. Semonin,Matthew C. Beard,Margit Zacharias,Paul Stradins +7 more
TL;DR: In this paper, the surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects, such as dangling-bond defects, which are nearly eliminated by H 2 passivation, thus decreasing absorption below the quantum-confi ned bandgap and enhancing optical absorption by an order of magnitude.
Journal ArticleDOI
Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength.
TL;DR: The theoretical model for the bandgap structure, the polarization-dependent optical gain spectrum, and the free-carrier absorption of the n-type doped, tensile-strained Ge quantum-well laser shows a significant net gain can be obtained from the direct transition.
References
More filters
Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Related Papers (5)
The structural and luminescence properties of porous silicon
Visible light emission due to quantum size effects in highly porous crystalline silicon
A. G. Cullis,Leigh T. Canham +1 more