Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
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Book ChapterDOI
Optical and thermal radiative properties of semiconductors related to micro/nanotechnology
TL;DR: In this paper, the authors review the optical and thermal radiative properties of semiconductor materials related to the recent technological advancements that are playing a vital role in the integrated-circuit manufacturing, optoelectronics, and radiative energy conversion devices.
Journal ArticleDOI
White luminescence from Si+ and C+ ion-implanted SiO2 films
Alejandro Pérez-Rodríguez,O. González-Varona,B. Garrido,Paolo Pellegrino,Joan Ramon Morante,Caroline Bonafos,M. Carrada,Alain Claverie +7 more
TL;DR: The microstructural and optical analysis of SiO2 layers emitting white luminescence is reported in this paper, where Si nanocrystals are only observed outside the main C-implanted peak region, with a lower density closer to the surface, being smaller in size.
Journal ArticleDOI
Optical properties of silicon nanocrystal LEDs
J. de la Torre,Abdelkader Souifi,A. Poncet,C. Busseret,Mustapha Lemiti,Georges Bremond,Gérard Guillot,O. Gonzalez,B. Garrido,Joan Ramon Morante,Caroline Bonafos +10 more
TL;DR: In this paper, the authors describe how to fabricate good quality 3 nm nc-Si with low size distribution in thermal SiO2 oxides, and show a good agreement between simulations and experimental data for the indirect gap of 3 nm dots which shows a threshold energy around 2 eV.
Book ChapterDOI
Light emission in silicon
TL;DR: In this paper, a number of diverse approaches for engineering efficient light emission in silicon are discussed, and different approaches are placed in context and their prospects, for application in silicon based opto-electronics.
Journal ArticleDOI
Real-time propagation of the reduced one-electron density matrix in atom-centered Gaussian orbitals: application to absorption spectra of silicon clusters.
TL;DR: It is found that the exponential propagators can tolerate large time step size and retain the computational accuracy whereas the Krylov-subspace algorithm is a little inferior for a larger time step sizes compared with the second-order Magnus integration method with the MP/CMP expansion of the evolution operator in both weak and intense fields.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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