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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Effect of different preparation conditions on light emission from silicon implanted SiO2 layers

TL;DR: In this paper, the authors studied the variability of visible light emission from Si+ implanted SiO2 layers as a function of different annealing conditions (temperature, time and ambient).
Journal ArticleDOI

A microstructural study of porous silicon

TL;DR: In this article, it was shown that increasing porosity leads to a crystallite size reduction and to the deterioration of the material crystallinity, and that porosity increases up to a value of about 85%.
Journal ArticleDOI

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

TL;DR: In this paper, the authors review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs).
Journal ArticleDOI

Luminescent color image generation on porous silicon.

TL;DR: Black and white images were projected onto n-type silicon wafers during a photoelectrochemical etch to produce a color image that photoluminesces, demonstrating simultaneous encoding of a gray-scale image into thin-film interference, luminescence, and diffraction phenomena.
Journal ArticleDOI

Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

TL;DR: In this paper, the structure and photoluminescence of the resulting SiO2 films are investigated as a function of deposition temperature, and they demonstrate that low-temperature deposition results in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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