Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: the role of interactions of nanocrystals and oxygen
TL;DR: In this paper, a possible mechanism for photoemission from Si nanocrystals in an amorphous SiO2 matrix fabricated by ion implantation is reported, and the peak energy of the photoluminescence was found to be affected by the dose of implanted Si ions and the temperature during ion implantations, but to be independent of annealing time and excitation photon energy.
Journal ArticleDOI
Influence of etch stops on the microstructure of porous silicon layers
TL;DR: In this article, the direction of the porosity gradient and changes in the microstructure with depth are investigated by Raman spectroscopy and PL measurements, based on these results a new method for the formation of porous silicon (PS) layers is performed by interrupting the etch process several times during the formation.
Journal ArticleDOI
On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon
Leigh T. Canham,A. Loni,P. D. J. Calcott,A. J. Simons,C.L. Reeves,M. R. Houlton,J. P. Newey,K. J. Nash,Timothy I. Cox +8 more
TL;DR: In this paper, a broad blue photoluminescence band with nanosecond decay times gradually appears when heavily oxidized porous silicon is stored in ambient air for prolonged periods.
Journal ArticleDOI
Thermal Route for Chemical Modification and Photoluminescence Stabilization of Porous Silicon
TL;DR: In this article, the authors describe photoluminescence (PL) stabilization through chemical modification of freshly prepared porous silicon (PSi) surfaces, which react with 1-alkenes, nonconjugated dienes and aldehydes at elevated temperatures to form organic monolayers covalently bonded to the surface.
Journal ArticleDOI
The mechanism of Si etching in fluoride solutions
TL;DR: In this article, the roles of HF, F−, HF2−, OH− and H2O in etching both in the dark and under illumination have been considered and quantitative aspects of the kinetics and energetics of these mechanisms are evaluated.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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