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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Microstructure and optical absorption properties of si nanocrystals fabricated with low-pressure chemical-vapor deposition

TL;DR: In this paper, a simple technique for fabricating a layer of isolated Si quantum dots on SiO2 glass substrates is described, which uses conventional low pressure chemical-vapor deposition for an extremely short deposition time in the early stage of poly-Si film growth.
Journal ArticleDOI

Blue-green and red photoluminescence in CaTiO3 : Sm

TL;DR: In this article, blue-green and red photoluminescence (PL) emission in structurally disordered CaTiO3:Sm (CT:Sm) powders was observed at room temperature with laser excitation at 350.7 nm.
Journal ArticleDOI

Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices

TL;DR: In this article, the decay dynamics of stain etched and electroless metal-deposited PV devices have been characterized in the dark and under room light (RL), and the PV decay times are observed to be of the order of microseconds, and vary with etch duration as well as with the details of the EMD.
Journal ArticleDOI

Raman scattering from very thin Si layers of Si/SiO2 superlattices: Experimental evidence of structural modification in the 0.8–3.5 nm thickness region

TL;DR: In this paper, a Raman spectra of very thin (⩽3.5 nm) Si layers constituting Si/SiO2 superlattices and grown by molecular beam epitaxy is described.
Journal ArticleDOI

Influence of surface states on the photoluminescence from silicon nanostructures

TL;DR: In this paper, a phenomenological model was proposed to analyze the room temperature photoluminescence (PL) spectra observed from silicon nanostructures and incorporated the effects of localized surface states along with quantum confinement effects.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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