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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutions

TL;DR: In this paper, the photoluminescence emission of porous silicon was regularly measured while immersed in dilute metal ion solutions of Cu, Ag, and Au, and the emission spectra showed progressive quenching that advances from the blue edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width.
Journal ArticleDOI

Application of porous silicon as a sacrificial layer

TL;DR: Using porous silicon as a sacrificial layer, a surface micromachining (SMM) process with a large distance from the structure to the substrate is realized in this article, where the application of this process for making free standing structures of polysilicon and flow channels is described.
Journal ArticleDOI

Quantifying the size-dependent effect of the residual surface stress on the resonant frequencies of silicon nanowires if finite deformation kinematics are considered

TL;DR: It is demonstrated that, in contrast to predictions from linear surface elastic theory, when nonlinear, finite deformation kinematics are considered, the residual surface stress does impact the resonant frequencies of silicon nanowires.
Journal ArticleDOI

Ambient-stable blue luminescent silicon nanocrystals prepared by nanosecond-pulsed laser ablation in water

TL;DR: It is shown that stable and blue-luminescent Si-ncs can be produced by laser-generated plasma (nanosecond-pulsed excimer laser) confined in water and exhibit quantum confinement effect due to their size and are produced with an environmentally compatible process.
Journal ArticleDOI

Humidity sensors using porous silicon layer with mesa structure

TL;DR: In this paper, a capacitance-type humidity sensor in which a porous silicon layer is used as a humidity-sensing material was developed, which was fabricated monolithically to be compatible with the typical IC process technology except for the formation of porous silicon layers.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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