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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Detection of luminescent single ultrasmall silicon nanoparticles using fluctuation correlation spectroscopy

TL;DR: In this paper, a colloid of ultrasmall blue luminescent nanoparticles, observable with the naked eye, in room light was detected using two-photon near-infrared femtosecond excitation at 780 nm.
Journal ArticleDOI

Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

TL;DR: In this article, Si nanocrystals and Er3+ were prepared by ion implantation, and excess Si concentrations ranged from 5% to 15%; Er 3+ concentration for all samples was 0.5%.
Journal ArticleDOI

Evidence that blue luminescence of oxidized porous silicon originates from SiO2

TL;DR: In this article, the authors analyzed red and blue luminescence from porous silicon as a function of oxidation parameters and feature dimension determined with an atomic force microscope and found correlation between blue luminecence intensity and the increase in feature size caused by oxidation.
Journal ArticleDOI

Optical absorption evidence of a quantum size effect in porous silicon

TL;DR: In this article, optical transmission measurements performed on free-standing homogeneous porous silicon (PS) films of different porosities and substrate doping levels are presented, and the absorption coefficient curves deduced from these measurements, taking into account the total quantity of matter in the PS film, exhibit significant blue shift.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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