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Institution

Alcatel-Lucent

Stuttgart, Germany
About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.


Papers
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Journal ArticleDOI
Martín Abadi1
TL;DR: These rules have the form of typing rules for a basic concurrent language with cryptographic primitives, the spi calculus, and guarantee that, if a protocol typechecks, then it does not leak its secret inputs.
Abstract: We develop principles and rules for achieving secrecy properties in security protocols. Our approach is based on traditional classification techniques, and extends those techniques to handle concurrent processes that use shared-key cryptography. The rules have the form of typing rules for a basic concurrent language with cryptographic primitives, the spi calculus. They guarantee that, if a protocol typechecks, then it does not leak its secret inputs.

381 citations

Proceedings ArticleDOI
14 Sep 2003
TL;DR: The approach that is used is quite flexible and is a promising method to handle more sophisticated interference conditions, multiple channels, multiple antennas, and routing with diversity requirements.
Abstract: This paper considers the problem of determining the achievable rates in multi-hop wireless networks. We consider the problem of jointly routing the flows and scheduling transmissions to achieve a given rate vector. We develop tight necessary and sufficient conditions for the achievability of the rate vector. We develop efficient and easy to implement Fully Polynomial Time Approximation Schemes for solving the routing problem. The scheduling problem is a solved as a graph edge-coloring problem. We show that this approach guarantees that the solution obtained is within 67% of the optimal solution in the worst case and, in practice, is typically within about 80% of the optimal solution. The approach that we use is quite flexible and is a promising method to handle more sophisticated interference conditions, multiple channels, multiple antennas, and routing with diversity requirements.

378 citations

Journal ArticleDOI
TL;DR: In this paper, the suitability of organic light-emitting diodes for various applications, and consider the materials and manufacturing obstacles that must be overcome, are discussed in detail.
Abstract: We review the device and materials science behind organic electroluminescent diodes made both using discrete evaporable molecules and spin-cast organic polymers. A great deal of progress has been made in improving the efficiencies and spectral properties of organic light-emitting diodes, and these are now adequate for many applications. More work is necessary to understand the stability and degradation of emissive and charge-transporting organics, but some systems have been shown to be stable for 104 hours at display brightness. Major challenges still face the community in terms of developing satisfactory systems design and processing techniques if organic electroluminescence is to realize either performance or economic advantages over technologies and significantly penetrate the display market. We present an analysis of the suitability of organic light-emitting diodes for various applications, and consider the materials and manufacturing obstacles that must be overcome.

378 citations

Journal ArticleDOI
TL;DR: The IM transition is unusual in that all underdoped samples show low-temperature insulating behavior, even in samples with linear- $T$ above ${T}_{c}$ and apparently large ${k}_{F}l$.
Abstract: A 61-T pulsed magnetic field suppresses superconductivity in ${\mathrm{La}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CuO}}_{4}$ single crystals and reveals an insulator-to-metal (IM) crossover for both in-plane resistivity ${\ensuremath{\rho}}_{\mathrm{ab}}$ and $c$-axis resistivity ${\ensuremath{\rho}}_{c}$ at a Sr concentration near optimum doping ( $x\ensuremath{\simeq}0.16$). The IM transition is unusual in that all underdoped samples ( $xl0.16$) show low-temperature insulating behavior, even in samples with linear- $T$ ${\ensuremath{\rho}}_{\mathrm{ab}}$ above ${T}_{c}$ and apparently large ${k}_{F}l$.

377 citations

Journal ArticleDOI
TL;DR: In this paper, the integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness.
Abstract: The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which are important in achieving bright and uniform displays. Rapid thermal processing has been incorporated to achieve uniform polysilicon microstructure, along with silicides to reduce parasitic source and drain series resistance. Using these processes, TFT drain current nonuniformity has been reduced below 5% for 90% of the devices. This work also introduces transition metals to produce low resistance contacts to ITO and to eliminate hillock formation in the aluminum metallization. These processes, along with spin on glasses for planarization, have been used to produce functional active matrix arrays for OLED displays. The final array pixel performance is also presented.

377 citations


Authors

Showing all 37011 results

NameH-indexPapersCitations
George M. Whitesides2401739269833
Yoshua Bengio2021033420313
John A. Rogers1771341127390
Zhenan Bao169865106571
Thomas S. Huang1461299101564
Federico Capasso134118976957
Robert S. Brown130124365822
Christos Faloutsos12778977746
Robert J. Cava125104271819
Ramamoorthy Ramesh12264967418
Yann LeCun121369171211
Kamil Ugurbil12053659053
Don Towsley11988356671
Steven P. DenBaars118136660343
Robert E. Tarjan11440067305
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202212
202130
202050
201983
2018215