Journal ArticleDOI
Solid solubilities of impurity elements in germanium and silicon
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In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.Abstract:
The available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves. New solubility data are presented for the lead-germanium, zinc-germanium, indium-germanium, antimony-silicon, gallium-silicon and aluminum-silicon systems. The correlation of the solid solubilities with the heats of sublimation and the atom sizes of the impurity elements is considered.read more
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Journal ArticleDOI
The gettering of boron by an ion-implanted antimony layer in silicon
Richard B. Fair,Paul N. Pappas +1 more
TL;DR: In this article, secondary ion mass spectrometry has been employed to reveal the gettering of implanted B by an annealed, implanted Sb layer, which may be caused by electric-field-enhanced diffusion of the B as well as by solubility enhancement of the electrically-active Sb.
Book ChapterDOI
II – The Use of the Phase Diagram in Investigations of the Properties of Compound Semiconductors
Book ChapterDOI
Metastable Activation of Dopants by Solid Phase Epitaxial Recrystallisation
TL;DR: The ideal ultrashallow junction relies on high dopant solubility in the crystalline substrate, in order to boost activation and reduce sheet resistance, and low dopant diffusivity, to facilitate device scaling as mentioned in this paper.
DissertationDOI
Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies
TL;DR: Extending Moore's Law for Silicon CMOS using More-Moore and More-than-Moore Technologies as discussed by the authors, using more-Moore than Moore's law for CMOS applications.
Book ChapterDOI
Analyse von Verunreinigungen auf geläppten und geätzten Siliziumscheiben mit der Mikrosonde
TL;DR: In this article, a Reihe von Untersuchungen, in denen uber die Abhangigkeit der Ladungstrager-Lebensdauer and der Sperrspannung der p-n-Ubergange von der Art der Verunreinigungsatome, ihrer Konzentration und Verteilung im Kristall berichtet wird, is discussed.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Chemical interactions among defects in germanium and silicon
TL;DR: In this article, the authors present a blend of theory and experiment, and describe developments in this field during the past few years, including acid-base neutralization, complex ion formation, and ion pairing.
Journal ArticleDOI
Properties of Gold-Doped Silicon
TL;DR: In this article, the acceptor level is measured in $p$-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.
Journal ArticleDOI
Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
Herbert Stöhr,Wilhelm Klemm +1 more
TL;DR: In this paper, die Untersuchung von Systemen, die Halbmetalle enthalten, f¨r die Aufklarung feinerer Affinitatswirkungen von Bedeutung ist.